1964_IMPORT_AND_EXPORT_(STRATEGIC_COMMODITIES)_REGULATIONS — Page 81

1988 Ed.]

Import and Export (Strategic Commodities) Regulations

[CAP. 60

G 81

[Subsidiary]

IL 1547

IL 1548

2. "Operating frequency" is defined as the frequency used in measuring any of the

following:

(a) Output power;

(b) Power gain (GE, GB, GC, GPS or GID);

(c) Gain bandwidth product (FT); or

(d) Noise figure.

(For Phototransistors, see Item IL 1548.)

Thyristors, as follows, and dice and wafers therefor-

(a) Designed for use in pulse modulators having a rated turn-on time of less than

1 microsecond where the rated peak current exceeds 150 A;

(b) Having a rated turn-off time of less than 1 microsecond;

(c) Having a rated turn-off time of from 1 microsecond to less than 2.3 microseconds, except those having a rated peak current of 50 A or less and encapsulated in non-hermetically sealed packages,

(d) Having a rated turn-off time of from 2.3 to 10 microseconds and a "figure of merit”

more than 100.

Technical Notes:

1.

2.

The "figure of merit" is here defined as the product of the repetitive peak off-state voltage (VDRM) in kilovolts and the repetitive peak on-state current (ITRM) in amperes as shown on the thyristor data sheets.

The turn-off time for gate-turn-off thyristors is defined as the sum of the gate controlled delay time TGQ and the gate controlled fall time Trq to reach 10 per cent of the initial on-state current.

Photosensitive components, including linear and focal-plane arrays, as follows, and dice and wafers therefor-

(a) Photosensitive components (including photodiodes, phototransistors, photo-

thyristors, photoconductive cells and similar photosensitive components):

(1) Having a peak sensitivity at a wavelength longer than 1200 nanometres or

shorter than 190 nanometres; or

(2) Having a peak sensitivity at a wavelength shorter than 300 nanometres and having an efficiency of less than 0.1 per cent relative to peak response at wavelengths longer than 400 nanometres;

Note:

Vacuum photodiodes specially designed for use in spectrophotometry having a peak response at a wavelength shorter than 300 nanometres are not covered by this sub-item.

(For photomultiplier tubes which contain microchannel plates, see Item IL 1549.)

(b) Semiconductor photodiodes and phototransistors with a response time constant of 95 nanoseconds or less measured at the operating temperature for which the time constant reaches a minimum,

(c) Specially designed or rated as electromagnetic (including laser) and ionized-particle

radiation resistant;

(d) Linear and focal plane arrays (Hybrid or monolithic) having the characteristics

in (a) or (b) above, and specially designed components therefor;

Notes:

1. The time constant is defined as the time taken from the application of a light stimulus for the current increment to reach a value of 1-1/e times the final value (i.e. 63 per cent of the final value).

2. This Item does not embargo the following:

(a) Germanium photo devices with a peak sensitivity at a wavelength shorter

than 1750 nanometres;

(b) Infrared single-element encapsulated photoconductive cells or pyroelectric

detectors intended for civil applications and using any of the following:

(1) Evaporated lead sulphide;

(2) Triglycine sulphate with a surface area of 20 mm2 or less;

(3) Lead-lanthanum-zirconium titanate ceramic.