1988 Ed.]
Import and Export (Strategic Commodities) Regulations
[CAP. 60
G 81
[Subsidiary]
IL 1547
IL 1548
2. "Operating frequency" is defined as the frequency used in measuring any of the
following:
(a) Output power;
(b) Power gain (GE, GB, GC, GPS or GID);
(c) Gain bandwidth product (FT); or
(d) Noise figure.
(For Phototransistors, see Item IL 1548.)
Thyristors, as follows, and dice and wafers therefor-
(a) Designed for use in pulse modulators having a rated turn-on time of less than
1 microsecond where the rated peak current exceeds 150 A;
(b) Having a rated turn-off time of less than 1 microsecond;
(c) Having a rated turn-off time of from 1 microsecond to less than 2.3 microseconds, except those having a rated peak current of 50 A or less and encapsulated in non-hermetically sealed packages,
(d) Having a rated turn-off time of from 2.3 to 10 microseconds and a "figure of merit”
more than 100.
Technical Notes:
1.
2.
The "figure of merit" is here defined as the product of the repetitive peak off-state voltage (VDRM) in kilovolts and the repetitive peak on-state current (ITRM) in amperes as shown on the thyristor data sheets.
The turn-off time for gate-turn-off thyristors is defined as the sum of the gate controlled delay time TGQ and the gate controlled fall time Trq to reach 10 per cent of the initial on-state current.
Photosensitive components, including linear and focal-plane arrays, as follows, and dice and wafers therefor-
(a) Photosensitive components (including photodiodes, phototransistors, photo-
thyristors, photoconductive cells and similar photosensitive components):
(1) Having a peak sensitivity at a wavelength longer than 1200 nanometres or
shorter than 190 nanometres; or
(2) Having a peak sensitivity at a wavelength shorter than 300 nanometres and having an efficiency of less than 0.1 per cent relative to peak response at wavelengths longer than 400 nanometres;
Note:
Vacuum photodiodes specially designed for use in spectrophotometry having a peak response at a wavelength shorter than 300 nanometres are not covered by this sub-item.
(For photomultiplier tubes which contain microchannel plates, see Item IL 1549.)
(b) Semiconductor photodiodes and phototransistors with a response time constant of 95 nanoseconds or less measured at the operating temperature for which the time constant reaches a minimum,
(c) Specially designed or rated as electromagnetic (including laser) and ionized-particle
radiation resistant;
(d) Linear and focal plane arrays (Hybrid or monolithic) having the characteristics
in (a) or (b) above, and specially designed components therefor;
Notes:
1. The time constant is defined as the time taken from the application of a light stimulus for the current increment to reach a value of 1-1/e times the final value (i.e. 63 per cent of the final value).
2. This Item does not embargo the following:
(a) Germanium photo devices with a peak sensitivity at a wavelength shorter
than 1750 nanometres;
(b) Infrared single-element encapsulated photoconductive cells or pyroelectric
detectors intended for civil applications and using any of the following:
(1) Evaporated lead sulphide;
(2) Triglycine sulphate with a surface area of 20 mm2 or less;
(3) Lead-lanthanum-zirconium titanate ceramic.