1964_IMPORT_AND_EXPORT_(STRATEGIC_COMMODITIES)_REGULATIONS — Page 28

G 28

CAP. 60]

Import and Export (Strategic Commodities) Regulations

[1988 Ed.

[Subsidiary]

(4) Equipment embargoed by sub-item (b)(2) above is defined as follows—

(a) Finished masks, reticles and designs therefor;

(b) Hard surface (e.g. chromium, silicon, iron oxide) coated "substrates" (e.g. glass, quartz, sapphire) for the preparation of masks having dimensions exceeding 76.2 × 76.2 mm (3 x 3 inches);

(c) Computer-aided design (CAD) equipment, for transforming schematic or logic diagrams into designs for producing semiconductor devices or integrated circuits, having any of the following functions-

(1) Storage of pattern cells for subdivision of integrated circuits; (2) Scaling, positioning, or rotation of pattern cells;

(3) Interactive graphic capabilities;

(4) Design rule and circuit checking,

(5) Circuit layout modification of the arrangement of the elements;

N.B.

"Software" which performs any of the functions in this sub-paragraph, or which can be used for transient analysis, for logic analysis or logic checking, for automatic routing or cell placement, for the generation of test vectors or for process simulation is "specially designed software" embargoed by the heading of this Item.

(d) Mask fabrication machines using photo-optical methods as follows-

(1) Step and repeat cameras capable of producing arrays larger than 63.5 × 63.5 mm (2.5×2.5 inches), or capable of producing a single exposure larger than 3.75 x 3.75 mm (0.15 x 0.15 inch) in the focal plane, or capable of producing useful line widths of 3.5 micrometres or less;

(2) Pattern generators specially designed for the generation and/or manufacture of masks or the creation of patterns in photosensitive layers and with placement precision finer than 10 micrometres;

(3) Mask fabrication equipment containing automatic adjustment of focus or adjustment of the mask material into the focal plane;

(4) Equipment and holders for altering masks or reticles or adding pellicles to remove defects;

(For electron-beam systems, see note (3)(j) above.)

(e) Mask, reticle or pellicle inspection equipment as follows---

(1) For comparison with a precision of 0.75 micrometre or finer over an area of 63.5 x 63.5 mm (2.5 x 2.5 inches) or more;

(2) "Stored/programme-controlled" equipment with a resolution of 0.25 micrometre or finer and with a precision of 0.75 micrometre or finer over a distance in one or two coordinates of 63.5 mm (2.5 inches) or more;

(3) "Stored-programme controlled" defect inspection equipment;

N.B.I

Conventional scanning electron microscopes, except when specially designed and instrumented for automatic pattern inspection, are not covered by this sub-paragraph.

(f) Align and expose equipment using photo-optical methods, including projection image transfer equipment, capable of performing any of the following functions-

(1) Production of a useful pattern size of less than 5 micrometres;

(2) Alignment with a precision finer than 1 micro-metre;

(3) Field coverage exceeding 76.2 × 76.2 mm (3 × 3 inches);

(4) Wafer backside alignment;

(5) Automatic alignment by the sensing of patterns or index marks on the substrate;