1964_IMPORT_AND_EXPORT_(STRATEGIC_COMMODITIES)_REGULATIONS — Page 27

1988 Ed.]

Import and Export (Strategic Commodities) Regulations

[CAP. 60

G 27

[Subsidiary]

(1) Operation at pressures below 105 pascals (1 atmosphere absolute); (2) "Stored-programme controlled";

(3) Rotating vertical-support, radiant-heated reactors;

(4) Specially designed for processing bubble memories;

(5) Metal-organic chemical vapour deposition reactors;

(6) For liquid phase epitaxy;

(e) Molecular beam epitaxial growth equipment;

(f) "Magnetically-enhanced" sputtering equipment;

Technical Note:

"Magnetically-enhanced" refers to equipment incorporating a cathode assembly having an integral magnetic structure for enhancing the plasma intensity.

(g) Equipment designed for ion implantation, or for ion-enhanced or photo-enhanced diffusion;

(h) Equipment for selective or non-selective removal by dry methods of passivation layers, dielectrics, semi-conductor materials, resists or metals except horizontal, cylindrical, plasma etchers without "stored-programme controlled", end-point detection, Automatic loading or rotating mechanisms and not having the capability for parallel plate etching as used in semiconductor device manufacture;

N.B.

This sub-paragraph does not include vacuum sputtering equipment designed to operate in the sputter etch mode.

(i) Equipment for semi-conductor device fabrication operating below 105 pascals (1 atmosphere absolute) for the chemical vapour deposition of oxides, nitrides, metals and polysilicon;

N.B.

This sub-paragraph does not cover reactive sputtering equipment.

(j) Electron beam systems (including scanning electron microscopes), capable of mask making or semi-conductor device processing and having any of the following characteristics----

(1) Electrostatic beam deflection;

(2) Shaped, non-Gaussian beam profile;

(3) Beam blanking capability;

(4) Digital-to-analogue conversion rate greater than 3 MHz;

(5) Digital-to-analogue conversion accuracy greater than 12 bit;

(6) Target-to-beam position feedback control precision of 1 micrometre or finer;

N.B.

This subparagraph does not cover electron beam deposition systems, and (3) above does not cover scanning electron microscopes equipped for Auger analysis.

(k) Surface finishing equipment, specially designed for the processing of semiconductor wafers and having any of the following characteristics—

(1) Waxless or non-adhesive mounting,

(ii) Double-sided simultaneous polishing or lapping,

(iii) Capable of polishing and lapping wafers exceeding 76.2 mm (3 inches) in diameter;

(iv) Lapping or polishing in two stages on the same machine;

(l) Interconnection equipment which may include common single or multiple vacuum chambers specially designed to permit the integration of equipment embargoed by this item into a complete system.