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18. Apparatus for automatically sorting electronic components in respect of
their clectrical characteristics,
19. Radio spectrum analysers (being apparatus capable of indicating the single-
frequency components of multi-frequency oscillations) as follows-
(a) Designed to operate at frequencies over 1,000 Mcfs;
(b) Designed to operate at frequencies over 300 Mc/s and using inter- changeable heads (ie., R.F." tuning units) and incorporating integral sweep facilities;
(c) Having a display bandwidth in excess of 12 Mcfs;
(d) Specialized components, accessories and parts.
20. Electromagnetic waveguides and componcuts therefor, as follows-
(2) Rigid and flexible waveguides and components designed for use at
frequencies in excess of 12,500 Me/s;
(6) Waveguides having a bandwidth ratio greater than 15:1;
(c) Waveguide components, not elsewhore specified, as follows-
(1) Directional couplers having a bandwidth ratio greater than 1.5:1 and directivity over the band of 15 decibels or more;
(f) Rotary joints capable of transmitting more than one isolated channel or having a bandwidth greater than 3% of the centre mean frequency:
(ii) Magnetic including gyro-magnetic waveguide components;
(d) Pressurized waveguides and specialized components therefor;
(e) TEM mode devices using magnetic including gyro-magnetic properties;
(0 TR and anti-TR tubes and components therefor, except those designed for use in waveguides operating at a peak power not exceeding 100 KW and in frequency bands between 1.300 and 1,660 Mc/s. between 2.700 and 3,900 Mc/s or between 8,500 and 10,000 Mejs, provided these tubes do not include a control electrode, permitting the control of the ioniza tion by means of an external voltage.
21. Cathode-ray tubes, as follows-
(0) With a resolving power of 500 lines or more per inct (20 lines per mm.),
using the shrinking raster method of measurement;
(b) With writing speeds of more than 3.000 kam/s;
(c) With 3 or more electron guns, except 3-gun colour television tubes
designed for entertainment use;
(d) Alpha-numeric and similar data or information display tubes, display being obtained either by scanning or other means excluding those tubes in which the display position of each character is fixed.
22. Semi-conductor diodes, including rectifier diodes and switching diodes, but
excluding photodiodes, as followg—
(a) Any semi-conductor diode in which the bulk material is other than
silicon, germanium, selenium or copper-oxide;
(6) Signal diodes in which the bulk material is silicon or germanium
(including mixer, frequency-changing, and switching diodes)---
(i) Point-contact type diodes designed for use at frequencies in excess of 1,000 Mc/s;
(ii) Junction type diodes designed for use at input frequencies greater than 300 Mo's or which are designed for switching rates (repetition frequency) higher than 1 Mo/s;
(4)
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(1) Power diodes in which the rated peak inverse voltage taken as a recurrent voltage exceeds 1,000 volt për junction at 25°C. under any conditions of cooling:
(1) Controlled diodes, Le. semi-conductor multiple-junction devices for applications similar to those of gridcontrolled gasilcd tubes, de- signed for use at switching rates (repetition frequency) higher than 100 Kc/s;
(d) Tunnel diodes, not elsewhere specified.
23. Transistors and related devices (or related semi-conductor amplifying devices such as fieldistors, spacistors and technetrons) and specialized parts therefor, as follows.com
(
Of any type using any semi-conductor material having 4 or more active junctions within any single block of semi-conductor material;
(8) Of any type using a bulk semi-conductor material other than germanium;
(c) Using germanium as the bulk semi-conductor material and having any
of the following characteristics—
(1) An average F alpha of 50 to 150 Mc/s and designed to have a maximum collector dissipation greater than 150 mW;
(ii) An average f alpha greater than 150 Mc/s.
24. Photo cells. as follow.........
(a) Photoelectric cells, photo-conductive cells (including photo-transistors and similar cells) with a peak sensitivity at a wavelength longer than 12,000 Angström units or shorter than 3.000 Angström units;
(5) Photo-transistors (photo-conductive cells including photodiodes) with a response time constant of 1 millisecond or less measured at the operat- ing temperature of the cell for which the time constant reaches a minimu
25. Photomultiplier tubes of all types for which the maximum sensitivity occurs at wavelengths longer than 7,500 Angström units or shorter than 3,000 Angström únics.
26. Flash-discharge type X-ray tubes.
27. Image intensifiers, image converters and electronic storage tubes including memory transformers of radar pictures and ruggedized vidicon type tubes (excluding commercial standard television broadcasting camera tubes and commercial standard X-ray amplifier tubes).
28. Valves (tubes) electronic, and specialized parts, as follows-
(a)
() Valves rated for CW operation over the frequency range 300- 1,000 Mc/s and for which (at any part of this frequency range and under any condition of cooling) the product of frequency of operation in Me/s squared and the power output in Watts from the anode(s) of a single envelope at this frequency exceeds 104, when the valve is operat- ing in Class C telegraphy key down conditions or in Class C FM telephony conditions, or, if performance under these conditions is not known, the product of declared maximum frequency of full ratings in Meja squared and the maximum rated anode dissipation per valve in Watts exceeds 5 x 107;
(i) Valves rated for operation above 1.000 Mc/s;
(lü) Valves rated for pulse operation above 300 Mc/s:
(iv) Valves constructed with ceramic envelopes and rated for opera- tion above 300 Me/s;
(6) Valves, other than conventional types such as diodes, triodes, letrades, pentodes, etc., in which the velocity of the electrons is utilized as one of the functional parameters, including but not limited to klystrons.