1988 Ed.]
Import and Export (Strategic Commodities) Regulations
[CAP. 60
G 91
[Subsidiary]
(A) Mask programmed by the "manufacturer" for a civil application prior to shipment;
(B) A maximum of 32,768 bit per package;
(C) A maximum access time of no less than 450 ns; and
(D) Not rated for operation at an ambient temperature below 253K (-20°C) or above 348K (75°C);
(3) Positive-channel type or negative-channel type metal-oxide semiconductor read-only (PMOS-or NMOS-ROMs), having all of the following characteristics:
(A) Mask programmed or designed as character generators for a standard character font;
(B) A maximum access time of no less than 250 ns; and
(C) Not rated for operation at an ambient temperature below 253K (−20°C) or above 348K (75°C);
(4) Programmable (non-erasable) read-only (PROMs) having all of the following characteristics:
(A) Programmed by the "manufacturer" for a civil application prior to shipment;
(B) A maximum of 2,048 bit per package;
(C) A maximum access time of no less than 250 ns; and
(D) Not rated for operation at an ambient temperature below 253K (-20°C) or above 348K (75°C);
(5) Programmable (non-erasable) read-only (PROMs) having all of the following characteristics:
(A) Programmed by the "manufacturer" for a civil application prior to shipment;
(B) A maximum of 8,192 bit per package;
(C) A maximum access time of no less than 450 ns; and
(D) Not rated for operation at an ambient temperature below 253K (-20°C) or above 348K (75°C);
(6) Bipolar random-access (RAMs), having any of the following pairs of characteristics:
(A) A maximum of 64 bit per package and a maximum access time of no less than 30 ns;
(B) A maximum of 256 bit per package and a maximum access time of no less than 40 ns; or
(C) A maximum of 1,024 bit per package and a maximum access time of no less than 45 ns;
(7) Metal-oxide-semiconductor dynamic random access (MOS-DRAMs), having all of the following characteristics:
(A) A maximum of 4,096 bit per package;
(B) A maximum access time of no less than 250 ns; and
(C) Not rated for operation at an ambient temperature below 253K (-20°C) or above 348K (75°C);
(8) Metal-oxide semiconductor static random access (MOS-SRAMS), having both of the following characteristics:
(A) A maximum of 1,024 bit per package; and
(B) A maximum access time of no less than 450 ns;
(k) Amplifier "monolithic integrated circuits", "multichip integrated circuits", "film type integrated circuits" or "hybrid integrated circuits", as follows: