G 80
CAP. 60]
Import and Export (Strategic Commodities) Regulations
[1988 Ed.
[Subsidiary]
IL 1545
(d) Voltage variable capacitance diodes designed or rated for use at input or output frequencies greater than 1.7 GHz;
(e) Fast recovery diodes, as follows:
(1) Having a rated maximum reverse recovery time of less than 1 nanosecond; or (2) Having both a rated forward rectified current over 5 A and a rated maximum reverse recovery time of less than 20 nanoseconds;
Notes:
1.
2.
When average reverse recovery time is quoted instead of maximum reverse recovery time, the maximum may be regarded as two times the average. When reverse recovery time is not quoted, diodes rated for a stored charge of less than 25 pico-coulombs shall be regarded as embargoed by this sub-item;
(f) PIN diodes designed or rated for use at input or output frequencies above 1.7 GHz, with a peak power of greater than 5 W or a maximum CW power of greater than 500 mW;
(g) Non-coherent light-emitting diodes with a peak radiant intensity at a wavelength of greater than 1000 nanometres (for coherent light-emitting diodes, see Item IL 1522).
Notes:
1.
2.
3.
Diodes constructed with a rectifying deposited metal semi-conductor junction or barrier, such as hot-carrier or Schottky barrier diodes, will normally be considered under sub-items (b) and (e) above.
Not used.
For photodiodes see Item IL 1548.
4. Not used.
Transistors, as follows, and dice and wafers therefor...
(a) Transistors based upon silicon and having any of the following characteristics:
(1) An "operating frequency" exceeding 1.5 GHz;
(2) An "operating frequency" not exceeding 1.5 MHz and a "maximum collector dissipation" of more than 100 W;
(3) An "operating frequency" exceeding 1.5 MHz and a "maximum collector dissipation" of more than 250 W;
(4) An "operating frequency" exceeding 200 MHz and a product of the "operating frequency" (in GHz) times the "maximum collector dissipation" (in watts) of more than 10; or
(5) Being majority carrier-type transistors, including but not limited to junction field-effect transistors (FETs) and metal-oxide semiconductors transistors (MOS), except field-effect transistors having:
(i) A maximum power dissipation of no more than 6 W and an "operating frequency" not exceeding 1.0 GHz; or
(ii) A maximum power dissipation of no more than 1 W and an "operating frequency" not exceeding 2.0 GHz,
(b) Transistors based upon gallium arsenide and having any of the following characteristics:
(1) An "operating frequency" exceeding 1 GHz,
(2) A maximum power dissipation of more than 1 W; or
(3) A noise figure of less than 3 dB;
N.B.
Nothing in this subitem is intended to release any technology unique to transistors based upon gallium arsenide.
(c) Transistors based upon any semiconductor material other than germanium, silicon, or gallium arsenide.
Technical Notes:
1.
The "maximum collector dissipation" is defined as the continuous dissipation measured under the optimum cooling conditions specified by the manufacturer.
Page 80
Page 81