1988 Ed.]
Import and Export (Strategic Commodities) Regulations
[CAP. 60
G 79
[Subsidiary]
IL 1542
IL 1544
(b) With travelling wave or distributed deflection structure using delay lines or incorporating other techniques to minimize mismatch of fast phenomena signals to the deflection structure;
(c) Incorporating microchannel-plate electron multipliers, except cathode-ray tubes, having all of the following characteristics:
(1) The microchannel-plate electron multipliers have a hole pitch of 25 micrometres or more;
(2) The tubes are not ruggedized for military use;
(3) The tubes have a horizontal sweep slower than 200 ng/cm; and
(4) The electron gun is mounted parallel to the screen surface.
Note:
Technology for the design or production of cathode-ray tubes incorporating microchannel-plate electron multipliers is not released under this sub-item.
Cold cathode tubes and switches, as follows-----
(a) Triggered spark-gaps, having an anode delay time of 15 microseconds or less and rated for a peak current of 3 000 A or more, specially designed parts therefor, and equipment incorporating such devices;
(b) Cold cathode tubes, whether gas-filled or not, operating in a manner similar to a spark gap, containing three or more electrodes and having all the following characteristics:
(1) Rated for an anode peak voltage of 2 500 volts or more;
(2) Rated for peak currents of 190 A or more;
(3) An anode delay time of 10 microseconds or less; and
(4) An envelope diameter of less than 25.4 mm (1 inch).
Technical Notes:
1. Triggered spark-gaps are tubes with a structure consisting of two opposed anodes with shapes resembling flattened hemispheres, and with one or more triggering probes placed approximately in the centre of one anode. The structure is sealed and contains a mixture of gases, principally nitrogen, under less than atmospheric pressure.
2. Sub-item (b) above covers gas "krytron" tubes, vacuum "krytron" tubes and similar tubes.
Semiconductor diodes, as follows, and dice and wafers therefor
Note:
This item does not cover semiconductor diodes based upon germanium, selenium or copper oxide.
(a) Semiconductor diodes, designed or rated for use at input or output frequencies exceeding 12.7GHz;
(b) Mixer and detector diodes designed or rated for use at input or output frequencies greater than 3 GHz, except:
(i) Point contact diodes designed or rated for use at input or output frequencies of 12.5 GHz or less;
(ii) Schottky diodes designed or rated for mixer use at input or output frequencies of less than 12.5 GHz and having a noise figure of more than 6.5 dB;
(iii) Schottky diodes designed or rated for detector use at input or output frequencies of less than 12.5 GHz and having a minimum rated tangential sensitivity of either worse than -45 dBm under unbiased conditions or worse than -50 dBm under biased conditions;
(c) Oscillator and amplifier devices such as Gunn, Impatt, Trapatt, TED, and LSA (including those used for the direct conversion of dc to rf power) designed or rated for use at:
(1) Output frequencies above 1 GHz but not exceeding 4 GHz with a peak power more than 2 W or a maximum CW Power more than 200 mW; or
(2) Output frequencies above 4 GHz but not exceeding 12.5 GHz with a peak power more than 1 W or a maximum CW power more than 100 mW;