G 26
CAP. 60] Import and Export (Strategic Commodities) Regulations [1988 Ed. [Subsidiary]
(8) Class 10 filters capable of providing an environment of 10 or less particles of 0.3 micrometer or more per cubic foot and filter materials therefor;
Note:
This sub-item also embargoes such equipment used or modified for use in the manufacture or testing or other devices such as imaging devices, electro-optical devices, acoustic wave devices, film memory devices.
Notes:
(1) For equipment which is used in the manufacture and processing of semiconductors and semi-conductor material and which is specially designed to employ lasers or laser technology, see Item IL 1522.
(2) For the purpose of this item "stored programme controlled" is defined as a control using instructions stored in an electronic storage which a processor can execute in order to direct the performance of predetermined functions.
N.B.
Equipment may be "stored-programme controlled" whether the electronic storage is internal or external to the equipment;
(3) Equipment embargoed by sub-item (b)(1) above is defined as follows--
(a) Equipment for producing polycrystalline silicon embargoed by Item IL1757(1) having a purity of 99.99 per cent or more in the form of rods (ingots, boules), pellets, sheets, tubes or small particles;
(b) Equipment specially designed for purifying or processing III-V and II-VI semiconductor material covered by Item IL1757, except crystal pullers, for which see (c) below,
(c) Crystal pullers, furnaces, and gas systems, as follows----
(1) Types with specially designed "stored-programme controlled" temperature, power input or gas, liquid or vapour flow;
(2) Diffusion, oxidation and annealing furnaces for operation at pressures above 1 atmosphere (nominal);
(3) Annealing or re-crystallizing equipment other than constant temperature furnaces employing high rates of energy transfer capable of processing wafers at a rate greater than 50 square centimetres per minute;
(4) Plasma-enhanced or photo-enhanced chemical reactor equipment;
(5) Equipment for automatic control of crystal taper and diameter, except taper and diameter control mechanisms using any of the following equipment techniques-
(i) Radiation pyrometers;
(ii) Thermocouples;
(iii) RF power sensors; or
(iv) Mass weighing (without digital or anomaly control permitting the growth of semi-conductors);
(6) Crystal pullers having any of the following characteristics:
(i) Rechargeable without replacing the crucible container;
(ii) Capable of operation at pressures above or below 105 pascals (1 atmosphere absolute);
(iii) Capable of pulling crystals of a diameter greater than 76.2 mm (3 inches);
(v) Specially designed to minimize convection currents in the melt by the use of magnetic fields or multiple crucibles;
(v) Capable of pulling sheet or ribbon crystals;
(7) Vacuum induction-heated zone-refining equipment for operation at a pressure of 0.01 pascal or less;
(d) Equipment for epitaxial growth having any of the following characteristics-