A
componenets, and to simulate space condition (such as solar wind on the surface of the moon) for purposes of space exploration. very extensive field of application of ion beam technology still
remains to be explored and utilized.
Neutron Radiation Doping of Monocrystal Silicon
the
of
Silicon must undergo doping when used in the manufacture semi-conductors. Five-valence phospherous must be incorporated in pure monocrystal silicon in order to produce an n-type semi- quality conductor. A major problem or great difficulty for the and finished product rate of semi-conductors is ensuring evenness Diffusion or smelting of phospherous doping and accurate dosage.
methods may be used, but the best results are achieved by
using
neutron transmutation doping.
Neutron
transmutation
doping
involves
silicon in an atomic reactor and
placing
bombarding
the
it
monocrystalline
with neutrons. A nuclear reaction occurs when the nuclei of the silicon atoms are hit by neutrons. The silicon is transmuted into phospherous. The penetrative force of the neutrons is
extremely
high, and the interior
and exterior
of the
monocrystalline
silicon
receive
almost equal
bombardment.
Therefore, doped
phospherous produced by this method is much more even than
that
produced by the diffusion method.
Also,
since the amount of
neutron radiation is precisely controllable,
so is the dosage of
doped phospherous.
The
are products
fairly
consistent.
The
neutron bombardment efficiency is high as is the utilisation rate
of the original monocrystalline
silicon. By using neutron
transmutation phospherous doping,
silicon controlled rectifiers
can be produced. The finished product rate can
be more than
3