1964_IMPORT_AND_EXPORT_(STRATEGIC_COMMODITIES)_REGULATIONS — Page 147

1988 Ed.]

Import and Export (Strategic Commodities) Regulations

[CAP. 60

G147

[Subsidiary]

IL1757

IL1759

Compounds and materials, as follows----

(a) Monocrystalline silicon, except metallurgical-grade monocrystalline silicon having a purity not better than 99.97 per cent;

(b) Gallium of a purity equal to or greater than 99.9999 per cent and gallium III/V compounds of any purity level except:

(i) Gallium phosphide; or

(ii) Other gallium III/V compounds having a dislocation density (etch pit density-EPD) greater than 500,000 per cm2;

(c) Indium of a purity greater than 99.9995 per cent and III-V indium compounds containing more than 1 per cent indium;

(d) Hetero-epitaxial materials consisting of a monocrystalline insulating substrate epitaxially layered with silicon, compounds of gallium or compounds of indium;

(e) Elemental Cd and Te of purity levels equal to or more than 99.9995 per cent and CdTe compounds of a purity level equal to or more than 99.99 per cent or single crystals of CdTe of any purity level;

(f) Polycrystalline silicon, except polycrystalline silicon having a purity not better than 99.99 per cent and containing at least 0.5 part in 106 each of iron, carbon, boron and phosphorus, plus other impurities;

(g) Compounds having a purity level based upon the amount of the primary constituents of 99.5 per cent or better and used in the synthesis of the materials covered by sub-item (f) above, for use as the silicon source in the deposition of epitaxial layers of silicon, silicon oxide or silicon nitride;

Note:

SiCl2H2 is embargoed by this sub-item when having a purity level of 97.0 per cent or better;

(h) Single crystals sapphire substrates;

(i) B2O3 with a purity of 99.9 per cent or greater, containing 1,000 parts per million of H2O or less, in powder or cast form;

(j) Monocrystalline germanium with a resistivity greater than 100 ohm.cm;

(k) Resist materials as follows:

(1) Negative resists whose spectral response has been adjusted for use below 350 nanometres;

(2) All positive resists;

(3) All resists for use with E-beams or ion beams with a sensitivity of 100 micro-coulomb/cm2 or better;

(4) All resists for use with X-rays with a sensitivity of 500 millijoules/cm2 or better; or

(5) All resists specified or optimized for dry development;

(l) Single-crystal forms of bismuth germanium oxide having piezoelectric properties and single-crystal forms of lithium niobate, of lithium tantalate and of aluminium phosphate;

(m) Metal-organic or hydride compounds of beryllium and magnesium (Group IIA), zinc, cadmium and mercury (Group IIB), aluminium, gallium and indium (Group IIIA), phosphorus, arsenic and antimony (Group VA) and selenium and tellurium (Group VIA) having a purity (metal basis) of 99.999 per cent or better.

Syntactic foam for underwater use formulated for applications at depths greater than 1,000 metres or with a density of 0.561 g/cm3 (35 lbs/cu ft) (specific gravity 0.561) or less.

Notes:

(1) Syntactic foam consists of hollow plastic or glass spheres less than 100 micrometres in diameter uniformly embedded in a resin matrix.

(2) For deep submergence vehicles, see Item IL1418.