TNAG-1508-FCO40-2066-Guangdong-nuclear-power-station-project-at-Daya-Bay-safety-c-1987 — Page 88

doubled,

drops

silicon.

and the standards for durability,

current leakage and

internal voltage are all superior to in

diffusion doped

Electron Beam Irradiated Silicon Controlled Rectifier

Electron beam irradiation is replacing the gold-doping

process. This saves gold, improves the process conditions, raises

production efficiency, improves product quality and increases the

rate of qualified products.

Electron beam irradiation produces

complicated

defects inside silicon. The concentration of these defects

an effect on a small number of carriers.

devices during

lattice

has

Therefore,

the time

switching-off can be

the

characteristics

of the

improved. This

not method of processing the components is

same as gold doping, and will not produce any rise in temperature

or increases in current leakage. At the same time, it is easier

to control than gold doping. It is easy to accurately control the

fact, if the componenet does not come up

dosage. In

to

the

standard

after the first

irradiation, the

process

can be

repeated.

If a component does not come up to the standard

after

doping, it will become a reject.

4