1526.
1527.
4329.
1533.
1537.
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(d) Designed for gas pressurization for the purpose of with- standing external overpressure or for raising the maximum voltage rating of the cable;
(e) Intended for submarine laying.
Communication cable containing more than one pair of conductors.
All cypher machines, cryptographic and/or coding devices and equipment, and associated equipment, usable on any transmis sion system (telegraphy, telephony, facsimile, video, data), that is designed to ensure the secrecy of communications and thus prevent clear reception by any one other than the intended receiver,
Radio testing equipment, not elsewhere specified.
Radio spectrum analyzers (being apparatus capable of indicating the single-frequency components of multi-frequency oscillationsì as follows-
(4) Designed to operate at frequencies over 1,000 megacycles
per second;
(8) Designed to operate at frequencies over 300 megacycles per second and using interchangeable heads (ie. R.F. tuning units) and incorporating integral sweep facilities;
(c) Having a display bandwidth in excess of 12 megacycles per
second;
(d) Specialized components, accessories and parts therefor.
Electromagnetic waveguides and components therefor, ES follows--
(a) Rigid and flexible waveguides and components designed for use at frequencies in excess of 12.500 megacycles per second;
(5) Waveguides having a bandwidth ralio greater than 13:1; (c) Waveguide components, not elsewhere specified. A
Follows-
(1) Directional couplers having a bandwidth ratio greater than 1.5:1 and directivity over the band of 15 decibels or
mers;
() Rotary joints capable of transmitting more than one isolated channel or having a bandwidth greater than 5% of the centre mean frequency:
(ii) Magnetic. including components;
gyro-magnetic,
waveguide
(d) Pressurized waveguides and specialized components therefor; (<) TEM mode devices, using magnetic, including gyro-magnetic
properties;
(0 TR and anti-TR tubes and components therefor. except those designed for use in waveguides operaling at a peak power not exceeding 100 kilowatts and in frequency bands between 1,300 and 1,560 megacycles per second, between 2,700 and 3,900 megacycles pet second or between 8,500 and 10,000 megacycles per second, provided these tubes do not include a control electrode, permitting the control of the ionization by means of an external voltage.
1541.
1542.
1544.
Cathode-ray tubes, as follows-
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(a) With a resolving power of 500 or more lines per inch (20 lines per millimetre) using the shrinking raster method of measurement;
(6) With writing speeds of more than 3,000 kilometres per
second:
(c) With 3 or more electron guns, except three-gun colour
television tubes designed for entertainment use;
(d) Alpha-mumeric and similar data or information display tubes, display being obtained either by scanning or other means excluding those tubes in which the display position of cach character is fixed.
Cold cathode tubes and switches, as follows-
(e) Triggered spark-gaps, having an anode delay time of 15 microseconds or less and raled for a peak current of 3,000 amps or more; specially designed parts therefor; and equip- ment incorporating such devices;
(8) Cold cathode tubes, whether gas-ålled or not, operating in a manner similar to a spark-gap, containing three or more electrodes and having all of the following characteristics-
(1) Rated for an anode peak voltage of 2,500 volts or more:
(1) Rated for peak currents of 300 amps or more; (i) An anode delay time of 10 microseconds or less; (iv) An envelope diameter of less than 1 inch (25.4 millimetres).
Semi-conductor diodes, including reelifer diodes and switching diodes, but excluding photodiodes (see item 1548), as follow- (a) Any semi-conducter diode in which the bulk material is other than silicon, germanium, selenium or copper oxide; (5) Signal diodes in which the bulk material is silicon or germanium (including mixer, frequency-changing and switch- ing diodes)-—-—
(a)
() Point contract type diodes designed for use at frequen- cles in excess of 1,000 megacycles per second;
(1) Junction type diodes designed for use at input fre- quencies greater than 300 megacycles per second or which are designed for switching rates (repetition frequency) higher than 1 megacycle per second:
0) Power diodes in which the rated maximum recurrent reverse voltage exceeds 1,000 volts per junction at 25°C. under any conditions of cooling, except those in which the rated forward current per junction under continuous opera- tion exceeds 200 amperes, and the rated maximum recurrent reverse voltage does not exceed 1,300 volts per junction:
(ii) Controlled diodes, Le. semi-conductor multiple-juoc- tion devices for applications similar to those of grid-con- trolled gas-filled tubes, designed for use al switching rates (repetition frequency) higher than 100 kilocycles per second; (d) Tunnel diodes, not elsewhere specified.
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